Rapid mapping of polarization switching through complete information acquisition

Polarization switching in ferroelectric and multiferroic materials underpins a broad range of current and emergent applications, ranging from random access memories to field-effect transistors, and tunnelling devices. Switching in these materials is exquisitely sensitive to local defects and microst...

Descripción completa

Detalles Bibliográficos
Autores principales: Somnath, Suhas, Belianinov, Alex, Kalinin, Sergei V., Jesse, Stephen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5146286/
https://www.ncbi.nlm.nih.gov/pubmed/27910941
http://dx.doi.org/10.1038/ncomms13290

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5146286/
https://www.ncbi.nlm.nih.gov/pubmed/27910941
http://dx.doi.org/10.1038/ncomms13290

Ejemplares similares