Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of t...

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Detalles Bibliográficos
Autores principales: Nguyen, Viet Cuong, Lee, Pooi See
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5150231/
https://www.ncbi.nlm.nih.gov/pubmed/27941830
http://dx.doi.org/10.1038/srep38816

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5150231/
https://www.ncbi.nlm.nih.gov/pubmed/27941830
http://dx.doi.org/10.1038/srep38816

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