Defect-free high Sn-content GeSn on insulator grown by rapid melting growth

GeSn is an attractive semiconductor material for Si-based photonics. However, large lattice mismatch between GeSn and Si and the low solubility of Sn in Ge limit its development. In order to obtain high Sn-content GeSn on Si, it is normally grown at low temperature, which would lead to inevitable di...

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Detalles Bibliográficos
Autores principales: Liu, Zhi, Cong, Hui, Yang, Fan, Li, Chuanbo, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5150248/
https://www.ncbi.nlm.nih.gov/pubmed/27941825
http://dx.doi.org/10.1038/srep38386

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5150248/
https://www.ncbi.nlm.nih.gov/pubmed/27941825
http://dx.doi.org/10.1038/srep38386

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