Temperature-driven topological quantum phase transitions in a phase-change material Ge(2)Sb(2)Te(5)

The Ge(2)Sb(2)Te(5) is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its el...

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Detalles Bibliográficos
Autores principales: Eremeev, S. V., Rusinov, I. P., Echenique, P. M., Chulkov, E. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5153837/
https://www.ncbi.nlm.nih.gov/pubmed/27958321
http://dx.doi.org/10.1038/srep38799

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5153837/
https://www.ncbi.nlm.nih.gov/pubmed/27958321
http://dx.doi.org/10.1038/srep38799

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