Investigation of switching mechanism in HfO(x)-ReRAM under low power and conventional operation modes

Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO(2)/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as t...

Descripción completa

Detalles Bibliográficos
Autores principales: Feng, Wei, Shima, Hisashi, Ohmori, Kenji, Akinaga, Hiroyuki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5175169/
https://www.ncbi.nlm.nih.gov/pubmed/28000741
http://dx.doi.org/10.1038/srep39510

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5175169/
https://www.ncbi.nlm.nih.gov/pubmed/28000741
http://dx.doi.org/10.1038/srep39510

Ejemplares similares