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Investigation of switching mechanism in HfO(x)-ReRAM under low power and conventional operation modes
Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO(2)/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as t...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5175169/ https://www.ncbi.nlm.nih.gov/pubmed/28000741 http://dx.doi.org/10.1038/srep39510 |