The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive...

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Detalles Bibliográficos
Autores principales: Chang, Sheng-Po, Chang, Li-Yang, Li, Jyun-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191125/
https://www.ncbi.nlm.nih.gov/pubmed/27983694
http://dx.doi.org/10.3390/s16122145

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191125/
https://www.ncbi.nlm.nih.gov/pubmed/27983694
http://dx.doi.org/10.3390/s16122145

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