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The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive...

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Detalles Bibliográficos
Autores principales:	Chang, Sheng-Po, Chang, Li-Yang, Li, Jyun-Yi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191125/ https://www.ncbi.nlm.nih.gov/pubmed/27983694 http://dx.doi.org/10.3390/s16122145

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