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XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering
Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N(2)/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging fro...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Springer US
2017
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5213810/ https://www.ncbi.nlm.nih.gov/pubmed/28054331 http://dx.doi.org/10.1186/s11671-016-1769-y |
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author | Haider, M. Baseer |
author_facet | Haider, M. Baseer |
author_sort | Haider, M. Baseer |
collection | PubMed |
description | Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N(2)/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn(3)N(2) samples grown at lower N(2)/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N(2)/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N(2)/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N(2)/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn–N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies. |
format | Online Article Text |
id | pubmed-5213810 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-52138102017-01-18 XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering Haider, M. Baseer Nanoscale Res Lett Nano Express Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N(2)/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn(3)N(2) samples grown at lower N(2)/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N(2)/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N(2)/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N(2)/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn–N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies. Springer US 2017-01-04 /pmc/articles/PMC5213810/ /pubmed/28054331 http://dx.doi.org/10.1186/s11671-016-1769-y Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Haider, M. Baseer XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title | XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title_full | XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title_fullStr | XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title_full_unstemmed | XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title_short | XPS Depth Profile Analysis of Zn(3)N(2) Thin Films Grown at Different N(2)/Ar Gas Flow Rates by RF Magnetron Sputtering |
title_sort | xps depth profile analysis of zn(3)n(2) thin films grown at different n(2)/ar gas flow rates by rf magnetron sputtering |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5213810/ https://www.ncbi.nlm.nih.gov/pubmed/28054331 http://dx.doi.org/10.1186/s11671-016-1769-y |
work_keys_str_mv | AT haidermbaseer xpsdepthprofileanalysisofzn3n2thinfilmsgrownatdifferentn2argasflowratesbyrfmagnetronsputtering |