Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence in...

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Detalles Bibliográficos
Autores principales: Ho, V. X., Dao, T. V., Jiang, H. X., Lin, J. Y., Zavada, J. M., McGill, S. A., Vinh, N. Q.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5215594/
https://www.ncbi.nlm.nih.gov/pubmed/28054672
http://dx.doi.org/10.1038/srep39997

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5215594/
https://www.ncbi.nlm.nih.gov/pubmed/28054672
http://dx.doi.org/10.1038/srep39997

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