Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III–V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge(2)Sb(2)Te(5) (GST) and Ge(2)Sb(1.8)Bi(0.2)Te(5) (GSBT)...

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Detalles Bibliográficos
Autores principales: Huang, Yuan-qing, Huang, Rong, Liu, Qing-lu, Zheng, Chang-cheng, Ning, Ji-qiang, Peng, Yong, Zhang, Zi-yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216013/
https://www.ncbi.nlm.nih.gov/pubmed/28058648
http://dx.doi.org/10.1186/s11671-016-1780-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216013/
https://www.ncbi.nlm.nih.gov/pubmed/28058648
http://dx.doi.org/10.1186/s11671-016-1780-3

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