Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing...

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Detalles Bibliográficos
Autores principales: Kosub, Tobias, Kopte, Martin, Hühne, Ruben, Appel, Patrick, Shields, Brendan, Maletinsky, Patrick, Hübner, René, Liedke, Maciej Oskar, Fassbender, Jürgen, Schmidt, Oliver G., Makarov, Denys
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216083/
https://www.ncbi.nlm.nih.gov/pubmed/28045029
http://dx.doi.org/10.1038/ncomms13985

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5216083/
https://www.ncbi.nlm.nih.gov/pubmed/28045029
http://dx.doi.org/10.1038/ncomms13985

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