Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS(2) and HfO(2) High-k Dielectric

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS(2)) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS(2) channel and gate dielectric is fundamentally import...

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Detalles Bibliográficos
Autores principales: Xia, Pengkun, Feng, Xuewei, Ng, Rui Jie, Wang, Shijie, Chi, Dongzhi, Li, Cequn, He, Zhubing, Liu, Xinke, Ang, Kah-Wee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5234002/
https://www.ncbi.nlm.nih.gov/pubmed/28084434
http://dx.doi.org/10.1038/srep40669

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5234002/
https://www.ncbi.nlm.nih.gov/pubmed/28084434
http://dx.doi.org/10.1038/srep40669

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