Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. B...

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Detalles Bibliográficos
Autores principales: Han, Runze, Huang, Peng, Zhao, Yudi, Chen, Zhe, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236033/
https://www.ncbi.nlm.nih.gov/pubmed/28091948
http://dx.doi.org/10.1186/s11671-016-1807-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236033/
https://www.ncbi.nlm.nih.gov/pubmed/28091948
http://dx.doi.org/10.1186/s11671-016-1807-9

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