Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. B...

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Detalles Bibliográficos
Autores principales: Han, Runze, Huang, Peng, Zhao, Yudi, Chen, Zhe, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236033/
https://www.ncbi.nlm.nih.gov/pubmed/28091948
http://dx.doi.org/10.1186/s11671-016-1807-9
Descripción
Sumario:In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.

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