Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. B...

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Detalles Bibliográficos
Autores principales: Han, Runze, Huang, Peng, Zhao, Yudi, Chen, Zhe, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236033/
https://www.ncbi.nlm.nih.gov/pubmed/28091948
http://dx.doi.org/10.1186/s11671-016-1807-9
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author Han, Runze
Huang, Peng
Zhao, Yudi
Chen, Zhe
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_facet Han, Runze
Huang, Peng
Zhao, Yudi
Chen, Zhe
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_sort Han, Runze
collection PubMed
description In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.
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spelling pubmed-52360332017-01-25 Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique Han, Runze Huang, Peng Zhao, Yudi Chen, Zhe Liu, Lifeng Liu, Xiaoyan Kang, Jinfeng Nanoscale Res Lett Nano Express In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated. Springer US 2017-01-13 /pmc/articles/PMC5236033/ /pubmed/28091948 http://dx.doi.org/10.1186/s11671-016-1807-9 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Han, Runze
Huang, Peng
Zhao, Yudi
Chen, Zhe
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title_full Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title_fullStr Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title_full_unstemmed Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title_short Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
title_sort demonstration of logic operations in high-performance rram crossbar array fabricated by atomic layer deposition technique
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5236033/
https://www.ncbi.nlm.nih.gov/pubmed/28091948
http://dx.doi.org/10.1186/s11671-016-1807-9
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