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Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238691/ https://www.ncbi.nlm.nih.gov/pubmed/28144560 http://dx.doi.org/10.3762/bjnano.8.2 |