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Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15...

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Detalles Bibliográficos
Autores principales:	Chebotarev, Sergei N, Pashchenko, Alexander S, Lunin, Leonid S, Zhivotova, Elena N, Erimeev, Georgy A, Lunina, Marina L
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2017
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5238691/ https://www.ncbi.nlm.nih.gov/pubmed/28144560 http://dx.doi.org/10.3762/bjnano.8.2

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