Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visibl...

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Detalles Bibliográficos
Autores principales: Kum, Hyun, Seong, Han-Kyu, Lim, Wantae, Chun, Daemyung, Kim, Young-il, Park, Youngsoo, Yoo, Geonwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241666/
https://www.ncbi.nlm.nih.gov/pubmed/28098259
http://dx.doi.org/10.1038/srep40893

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241666/
https://www.ncbi.nlm.nih.gov/pubmed/28098259
http://dx.doi.org/10.1038/srep40893

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