Cargando…

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visibl...

Descripción completa

Detalles Bibliográficos
Autores principales:	Kum, Hyun, Seong, Han-Kyu, Lim, Wantae, Chun, Daemyung, Kim, Young-il, Park, Youngsoo, Yoo, Geonwook
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5241666/ https://www.ncbi.nlm.nih.gov/pubmed/28098259 http://dx.doi.org/10.1038/srep40893

Ejemplares similares

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012)

A bow-free freestanding GaN wafer
por: Shim, Jae-Hyoung, et al.
Publicado: (2020)

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption
por: Xing, Zhang, et al.
Publicado: (2022)

Using machine learning with optical profilometry for GaN wafer screening
por: Gallagher, James C., et al.
Publicado: (2023)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Gallium hydride vapor phase epitaxy of GaN nanowires
por: Zervos, Matthew, et al.
Publicado: (2011)

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
por: Kriouche, N, et al.
Publicado: (2010)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
por: He, Wei, et al.
Publicado: (2022)

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
por: Schubert, Felix, et al.
Publicado: (2016)

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
por: Rauschenbach, Bernd, et al.
Publicado: (2017)

Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
por: Jeong, Junseok, et al.
Publicado: (2020)

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO(2) Gate Dielectric
por: Yeom, Min Jae, et al.
Publicado: (2021)

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
por: Sun, Wei, et al.
Publicado: (2017)

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
por: Li, Tianbao, et al.
Publicado: (2018)

Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask
por: Kadys, Arūnas, et al.
Publicado: (2023)

Solution-based synthesis of wafer-scale epitaxial BiVO(4) thin films exhibiting high structural and optoelectronic quality
por: Kunzelmann, Viktoria F., et al.
Publicado: (2022)

Effects of N(2) Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
por: Junaid, Muhammad, et al.
Publicado: (2018)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
por: Gallagher, James C., et al.
Publicado: (2022)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
por: Jia, Li-Fang, et al.
Publicado: (2021)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

A partly-contacted epitaxial lateral overgrowth method applied to GaN material
por: Xiao, Ming, et al.
Publicado: (2016)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
por: Johar, Muhammad Ali, et al.
Publicado: (2020)

Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy
por: Minehisa, Keisuke, et al.
Publicado: (2023)

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
por: Yu, Ing-Song, et al.
Publicado: (2014)

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
por: Chakraborty, Surajit, et al.
Publicado: (2023)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication
por: Wei, Yazhou, et al.
Publicado: (2023)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

Wafer-scale epitaxial modulation of quantum dot density
por: Bart, N., et al.
Publicado: (2022)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
por: Ciarkowski, Timothy, et al.
Publicado: (2019)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
por: Li, Pengkun, et al.
Publicado: (2020)

Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy
por: Lee, Moonsang, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_ce3ij7303hc4j52p651k07mt65