Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO(2), obtaining specific contact resistivity [Formula: see text] and carrier mobility a...

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Detalles Bibliográficos
Autores principales: Giubileo, Filippo, Di Bartolomeo, Antonio, Martucciello, Nadia, Romeo, Francesco, Iemmo, Laura, Romano, Paola, Passacantando, Maurizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5245740/
https://www.ncbi.nlm.nih.gov/pubmed/28335335
http://dx.doi.org/10.3390/nano6110206

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5245740/
https://www.ncbi.nlm.nih.gov/pubmed/28335335
http://dx.doi.org/10.3390/nano6110206

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