Scale-dependent diffusion anisotropy in nanoporous silicon

Nanoporous silicon produced by electrochemical etching of highly B-doped p-type silicon wafers can be prepared with tubular pores imbedded in a silicon matrix. Such materials have found many technological applications and provide a useful model system for studying phase transitions under confinement...

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Detalles Bibliográficos
Autores principales: Kondrashova, Daria, Lauerer, Alexander, Mehlhorn, Dirk, Jobic, Hervé, Feldhoff, Armin, Thommes, Matthias, Chakraborty, Dipanjan, Gommes, Cedric, Zecevic, Jovana, de Jongh, Petra, Bunde, Armin, Kärger, Jörg, Valiullin, Rustem
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247748/
https://www.ncbi.nlm.nih.gov/pubmed/28106047
http://dx.doi.org/10.1038/srep40207

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5247748/
https://www.ncbi.nlm.nih.gov/pubmed/28106047
http://dx.doi.org/10.1038/srep40207

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