Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volum...

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Detalles Bibliográficos
Autores principales: Yoon, Jun-Sik, Kim, Kihyun, Baek, Chang-Ki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5255564/
https://www.ncbi.nlm.nih.gov/pubmed/28112273
http://dx.doi.org/10.1038/srep41142

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5255564/
https://www.ncbi.nlm.nih.gov/pubmed/28112273
http://dx.doi.org/10.1038/srep41142

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