Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FE...

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Detalles Bibliográficos
Autores principales: Lim, Cheol-Min, Lee, In-Kyu, Lee, Ki Joong, Oh, Young Kyoung, Shin, Yong-Beom, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2017
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256244/
https://www.ncbi.nlm.nih.gov/pubmed/28179955
http://dx.doi.org/10.1080/14686996.2016.1253409

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256244/
https://www.ncbi.nlm.nih.gov/pubmed/28179955
http://dx.doi.org/10.1080/14686996.2016.1253409

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