The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al(2)O(3) as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The tr...

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Detalles Bibliográficos
Autores principales: Ding, Xingwei, Qin, Cunping, Song, Jiantao, Zhang, Jianhua, Jiang, Xueyin, Zhang, Zhilin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256629/
https://www.ncbi.nlm.nih.gov/pubmed/28116611
http://dx.doi.org/10.1186/s11671-017-1852-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256629/
https://www.ncbi.nlm.nih.gov/pubmed/28116611
http://dx.doi.org/10.1186/s11671-017-1852-z

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