The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al(2)O(3) as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The tr...

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Autores principales: Ding, Xingwei, Qin, Cunping, Song, Jiantao, Zhang, Jianhua, Jiang, Xueyin, Zhang, Zhilin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256629/
https://www.ncbi.nlm.nih.gov/pubmed/28116611
http://dx.doi.org/10.1186/s11671-017-1852-z
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author Ding, Xingwei
Qin, Cunping
Song, Jiantao
Zhang, Jianhua
Jiang, Xueyin
Zhang, Zhilin
author_facet Ding, Xingwei
Qin, Cunping
Song, Jiantao
Zhang, Jianhua
Jiang, Xueyin
Zhang, Zhilin
author_sort Ding, Xingwei
collection PubMed
description Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al(2)O(3) as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E (a), which can explain the experimental observation. A high-field effect mobility of 9.4 cm(2)/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10(7) and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.
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spelling pubmed-52566292017-01-25 The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition Ding, Xingwei Qin, Cunping Song, Jiantao Zhang, Jianhua Jiang, Xueyin Zhang, Zhilin Nanoscale Res Lett Nano Express Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al(2)O(3) as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E (a), which can explain the experimental observation. A high-field effect mobility of 9.4 cm(2)/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 10(7) and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS. Springer US 2017-01-23 /pmc/articles/PMC5256629/ /pubmed/28116611 http://dx.doi.org/10.1186/s11671-017-1852-z Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Ding, Xingwei
Qin, Cunping
Song, Jiantao
Zhang, Jianhua
Jiang, Xueyin
Zhang, Zhilin
The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title_full The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title_fullStr The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title_full_unstemmed The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title_short The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
title_sort influence of hafnium doping on density of states in zinc oxide thin-film transistors deposited via atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5256629/
https://www.ncbi.nlm.nih.gov/pubmed/28116611
http://dx.doi.org/10.1186/s11671-017-1852-z
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