Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

The magnetization and magnetoresistance of Si whiskers doped with <Ni, B> to boron concentrations corresponding to the metal-insulator transition (2 × 10(18) cm(−3) ÷ 5 × 10(18) cm(−3)) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2–300 K. Hysteresis of the ma...

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Detalles Bibliográficos
Autores principales: Yatsukhnenko, Serhii, Druzhinin, Anatoly, Ostrovskii, Igor, Khoverko, Yuriy, Chernetskiy, Mukhajlo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5267756/
https://www.ncbi.nlm.nih.gov/pubmed/28127712
http://dx.doi.org/10.1186/s11671-017-1855-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5267756/
https://www.ncbi.nlm.nih.gov/pubmed/28127712
http://dx.doi.org/10.1186/s11671-017-1855-9

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