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Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity
The magnetization and magnetoresistance of Si whiskers doped with <Ni, B> to boron concentrations corresponding to the metal-insulator transition (2 × 10(18) cm(−3) ÷ 5 × 10(18) cm(−3)) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2–300 K. Hysteresis of the ma...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5267756/ https://www.ncbi.nlm.nih.gov/pubmed/28127712 http://dx.doi.org/10.1186/s11671-017-1855-9 |