TiO(2) based nanostructured memristor for RRAM and neuromorphic applications: a simulation approach

We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical a...

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Detalles Bibliográficos
Autores principales: Dongale, T. D., Patil, P. J., Desai, N. K., Chougule, P. P., Kumbhar, S. M., Waifalkar, P. P., Patil, P. B., Vhatkar, R. S., Takale, M. V., Gaikwad, P. K., Kamat, R. K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2016
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271148/
https://www.ncbi.nlm.nih.gov/pubmed/28191426
http://dx.doi.org/10.1186/s40580-016-0076-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271148/
https://www.ncbi.nlm.nih.gov/pubmed/28191426
http://dx.doi.org/10.1186/s40580-016-0076-8

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