Scalability of Schottky barrier metal-oxide-semiconductor transistors

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky...

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Detalles Bibliográficos
Autor principal: Jang, Moongyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2016
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271151/
https://www.ncbi.nlm.nih.gov/pubmed/28191421
http://dx.doi.org/10.1186/s40580-016-0071-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271151/
https://www.ncbi.nlm.nih.gov/pubmed/28191421
http://dx.doi.org/10.1186/s40580-016-0071-0

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