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Scalability of Schottky barrier metal-oxide-semiconductor transistors

In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky...

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Autor principal: Jang, Moongyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Korea Nano Technology Research Society 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271151/
https://www.ncbi.nlm.nih.gov/pubmed/28191421
http://dx.doi.org/10.1186/s40580-016-0071-0
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author Jang, Moongyu
author_facet Jang, Moongyu
author_sort Jang, Moongyu
collection PubMed
description In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 10(13) traps/cm(2), 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N(2) annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
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spelling pubmed-52711512017-02-09 Scalability of Schottky barrier metal-oxide-semiconductor transistors Jang, Moongyu Nano Converg Review In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are estimated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are estimated as 1.5 × 10(13) traps/cm(2), 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by N(2) annealing. Based on the diode characteristics, various sizes of erbium-silicided/platinum-silicided n/p-type SB-MOSFETs are manufactured and analyzed. The manufactured SB-MOSFETs show enhanced drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are comparable with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime. Korea Nano Technology Research Society 2016-05-16 /pmc/articles/PMC5271151/ /pubmed/28191421 http://dx.doi.org/10.1186/s40580-016-0071-0 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Review
Jang, Moongyu
Scalability of Schottky barrier metal-oxide-semiconductor transistors
title Scalability of Schottky barrier metal-oxide-semiconductor transistors
title_full Scalability of Schottky barrier metal-oxide-semiconductor transistors
title_fullStr Scalability of Schottky barrier metal-oxide-semiconductor transistors
title_full_unstemmed Scalability of Schottky barrier metal-oxide-semiconductor transistors
title_short Scalability of Schottky barrier metal-oxide-semiconductor transistors
title_sort scalability of schottky barrier metal-oxide-semiconductor transistors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271151/
https://www.ncbi.nlm.nih.gov/pubmed/28191421
http://dx.doi.org/10.1186/s40580-016-0071-0
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