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Scalability of Schottky barrier metal-oxide-semiconductor transistors
In this paper, the general characteristics and the scalability of Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are introduced and reviewed. The most important factors, i.e., interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Korea Nano Technology Research Society
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271151/ https://www.ncbi.nlm.nih.gov/pubmed/28191421 http://dx.doi.org/10.1186/s40580-016-0071-0 |