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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scal...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Korea Nano Technology Research Society
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271161/ https://www.ncbi.nlm.nih.gov/pubmed/28191423 http://dx.doi.org/10.1186/s40580-016-0073-y |