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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scal...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Korea Nano Technology Research Society
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271161/ https://www.ncbi.nlm.nih.gov/pubmed/28191423 http://dx.doi.org/10.1186/s40580-016-0073-y |
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author | Choi, Woo Young Lee, Hyun Kook |
author_facet | Choi, Woo Young Lee, Hyun Kook |
author_sort | Choi, Woo Young |
collection | PubMed |
description | The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal–oxide–semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high-k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high-k etching process. |
format | Online Article Text |
id | pubmed-5271161 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Korea Nano Technology Research Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-52711612017-02-09 Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) Choi, Woo Young Lee, Hyun Kook Nano Converg Research The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal–oxide–semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high-k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high-k etching process. Korea Nano Technology Research Society 2016-06-15 /pmc/articles/PMC5271161/ /pubmed/28191423 http://dx.doi.org/10.1186/s40580-016-0073-y Text en © The Author(s) 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Research Choi, Woo Young Lee, Hyun Kook Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title | Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title_full | Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title_fullStr | Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title_full_unstemmed | Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title_short | Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) |
title_sort | demonstration of hetero-gate-dielectric tunneling field-effect transistors (hg tfets) |
topic | Research |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5271161/ https://www.ncbi.nlm.nih.gov/pubmed/28191423 http://dx.doi.org/10.1186/s40580-016-0073-y |
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