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Fermi level and bands offsets determination in insulating (Ga,Mn)N/GaN structures
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga(1−x)Mn(x)N/GaN(template) bilayers of various Mn concentration x. It...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5288782/ https://www.ncbi.nlm.nih.gov/pubmed/28150798 http://dx.doi.org/10.1038/srep41877 |