Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor

Although p-type activation of GaN by Mg underpins a mature commercial technology, the nature of the Mg acceptor in GaN is still controversial. Here, we use implanted Eu as a ‘spectator ion’ to probe the lattice location of Mg in doubly doped GaN(Mg):Eu. Photoluminescence spectroscopy of this materia...

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Detalles Bibliográficos
Autores principales: Singh, A. K., O’Donnell, K. P., Edwards, P. R., Lorenz, K., Kappers, M. J., Boćkowski, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5290469/
https://www.ncbi.nlm.nih.gov/pubmed/28155896
http://dx.doi.org/10.1038/srep41982

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5290469/
https://www.ncbi.nlm.nih.gov/pubmed/28155896
http://dx.doi.org/10.1038/srep41982

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