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Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
Although p-type activation of GaN by Mg underpins a mature commercial technology, the nature of the Mg acceptor in GaN is still controversial. Here, we use implanted Eu as a ‘spectator ion’ to probe the lattice location of Mg in doubly doped GaN(Mg):Eu. Photoluminescence spectroscopy of this materia...
Autores principales: | Singh, A. K., O’Donnell, K. P., Edwards, P. R., Lorenz, K., Kappers, M. J., Boćkowski, M. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5290469/ https://www.ncbi.nlm.nih.gov/pubmed/28155896 http://dx.doi.org/10.1038/srep41982 |
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