Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HS...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaofeng, Li, Baozeng, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5298783/
https://www.ncbi.nlm.nih.gov/pubmed/28117744
http://dx.doi.org/10.3390/s17010212

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5298783/
https://www.ncbi.nlm.nih.gov/pubmed/28117744
http://dx.doi.org/10.3390/s17010212

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