Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts

Silicon nitride stress capping layer is an industry proven technique for increasing electron mobility and drive currents in n-channel silicon MOSFETs. Herein, the strain induced by silicon nitride is firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer M...

Descripción completa

Detalles Bibliográficos
Autores principales: Chai, Yu, Su, Shanshan, Yan, Dong, Ozkan, Mihrimah, Lake, Roger, Ozkan, Cengiz S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301248/
https://www.ncbi.nlm.nih.gov/pubmed/28186113
http://dx.doi.org/10.1038/srep41593

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301248/
https://www.ncbi.nlm.nih.gov/pubmed/28186113
http://dx.doi.org/10.1038/srep41593

Ejemplares similares