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Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
Silicon nitride stress capping layer is an industry proven technique for increasing electron mobility and drive currents in n-channel silicon MOSFETs. Herein, the strain induced by silicon nitride is firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer M...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5301248/ https://www.ncbi.nlm.nih.gov/pubmed/28186113 http://dx.doi.org/10.1038/srep41593 |