Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis

The V-pits and potential fluctuations in InGaN/GaN multiple quantum wells (MQWs) are key factors for understanding the performance of InGaN/GaN-based light-emitting diodes (LEDs). However, photoluminescence (PL) measurements using conventional optical microscopy only provide ensemble information due...

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Detalles Bibliográficos
Autores principales: Kim, MinKwan, Choi, Sunghan, Lee, Joo-Hyung, Park, ChungHyun, Chung, Tae-Hoon, Baek, Jong Hyeob, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304185/
https://www.ncbi.nlm.nih.gov/pubmed/28198804
http://dx.doi.org/10.1038/srep42221

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304185/
https://www.ncbi.nlm.nih.gov/pubmed/28198804
http://dx.doi.org/10.1038/srep42221

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