Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth...

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Detalles Bibliográficos
Autores principales: Liu, Xingfang, Chen, Yu, Sun, Changzheng, Guan, Min, Zhang, Yang, Zhang, Feng, Sun, Guosheng, Zeng, Yiping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304623/
https://www.ncbi.nlm.nih.gov/pubmed/28347079
http://dx.doi.org/10.3390/nano5031532

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304623/
https://www.ncbi.nlm.nih.gov/pubmed/28347079
http://dx.doi.org/10.3390/nano5031532

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