Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The v...

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Detalles Bibliográficos
Autores principales: Hsieh, Shu-Huei, Chen, Wen Jauh, Chien, Chu-Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304771/
https://www.ncbi.nlm.nih.gov/pubmed/28347099
http://dx.doi.org/10.3390/nano5041840

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304771/
https://www.ncbi.nlm.nih.gov/pubmed/28347099
http://dx.doi.org/10.3390/nano5041840

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