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Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates
An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga–doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that al...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5304781/ https://www.ncbi.nlm.nih.gov/pubmed/28347098 http://dx.doi.org/10.3390/nano5041831 |