Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO(3) (A=Ca, Sr, and Ba) and SrTiO(3)

The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO(3) (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scannin...

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Detalles Bibliográficos
Autores principales: Baniecki, John D., Yamazaki, Takashi, Ricinschi, Dan, Van Overmeere, Quentin, Aso, Hiroyuki, Miyata, Yusuke, Yamada, Hiroaki, Fujimura, Norifumi, Maran, Ronald, Anazawa, Toshihisa, Valanoor, Nagarajan, Imanaka, Yoshihiko
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307316/
https://www.ncbi.nlm.nih.gov/pubmed/28195149
http://dx.doi.org/10.1038/srep41725

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307316/
https://www.ncbi.nlm.nih.gov/pubmed/28195149
http://dx.doi.org/10.1038/srep41725

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