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Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO(3) (A=Ca, Sr, and Ba) and SrTiO(3)
The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO(3) (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scannin...
Autores principales: | Baniecki, John D., Yamazaki, Takashi, Ricinschi, Dan, Van Overmeere, Quentin, Aso, Hiroyuki, Miyata, Yusuke, Yamada, Hiroaki, Fujimura, Norifumi, Maran, Ronald, Anazawa, Toshihisa, Valanoor, Nagarajan, Imanaka, Yoshihiko |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307316/ https://www.ncbi.nlm.nih.gov/pubmed/28195149 http://dx.doi.org/10.1038/srep41725 |
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