Effects of Annealing Ambient on the Characteristics of LaAlO(3) Films Grown by Atomic Layer Deposition

We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO(3) films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N(2), and O(2), respectively. It was found that the chemic...

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Detalles Bibliográficos
Autores principales: Zhao, Lu, Liu, Hong-xia, Wang, Xing, Fei, Chen-xi, Feng, Xing-yao, Wang, Yong-te
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307421/
https://www.ncbi.nlm.nih.gov/pubmed/28209030
http://dx.doi.org/10.1186/s11671-017-1889-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307421/
https://www.ncbi.nlm.nih.gov/pubmed/28209030
http://dx.doi.org/10.1186/s11671-017-1889-z

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