Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

The influences of annealing temperature in N(2) atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen inco...

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Detalles Bibliográficos
Autores principales: Sun, Long, Lu, Hong-Liang, Chen, Hong-Yan, Wang, Tao, Ji, Xin-Ming, Liu, Wen-Jun, Zhao, Dongxu, Devi, Anjana, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307488/
https://www.ncbi.nlm.nih.gov/pubmed/28181165
http://dx.doi.org/10.1186/s11671-016-1822-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307488/
https://www.ncbi.nlm.nih.gov/pubmed/28181165
http://dx.doi.org/10.1186/s11671-016-1822-x

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