A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promisi...

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Detalles Bibliográficos
Autores principales: Chakrabarti, B., Lastras-Montaño, M. A., Adam, G., Prezioso, M., Hoskins, B., Cheng, K.-T., Strukov, D. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307953/
https://www.ncbi.nlm.nih.gov/pubmed/28195239
http://dx.doi.org/10.1038/srep42429

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307953/
https://www.ncbi.nlm.nih.gov/pubmed/28195239
http://dx.doi.org/10.1038/srep42429

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