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A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit
Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore’s law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promisi...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5307953/ https://www.ncbi.nlm.nih.gov/pubmed/28195239 http://dx.doi.org/10.1038/srep42429 |